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I NTEGRATED C IRCUITS D IVISION
2 Thermal Characteristics
CPC1779
Parameter
Thermal Resistance (Junction to Case)
Thermal Resistance (Junction to Ambient)
Junction Temperature (Operating)
Conditions
-
Free Air
-
Symbol
R ? JC
R ? JA
T J
Minimum
-
-
-40
Typical
-
33
-
Maximum
0.3
-
100
Units
°C/W
°C/W
°C
2.1 Thermal Management
Device high current characterization was performed using Kunze heat sink KU 1-159, phase change thermal interface
material KU-ALC 5, and transistor clip KU 4-499/1. This combination provided an approximate junction-to-ambient
thermal resistance of 12.5°C/W.
2.2 Heat Sink Calculation
Higher load currents are possible by using lower thermal resistance heat sink combinations.
Heat Sink Ratin g
R θ CA =
(T J - T A ) I L(99)2
I L2 ? P D(99)
- R θ JC
T J = J u nction Temperat u re (°C), T J ≤ 100°C *
T A = Am b ient Temperat u re (°C)
I L(99) = Load C u rrent w ith Case Temperat u re @ 99°C (A DC )
I L = Desired Operating Load C u rrent (A DC ), I L ≤ I L(MAX)
R θ JC = Thermal Resistance, J u nction to Case (°C/ W ) = 0.3°C/ W
R θ CA = Thermal Resistance of Heat Sink & Thermal Interface Material , Case to Am b ient (°C/ W )
P D(99) = Maxim u m po w er dissipation w ith case temperat u re held at 99oC = 3.33 W
* Ele v ated j u nction temperat u re red u ces semicond u ctor lifetime.
3
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